PART |
Description |
Maker |
ASM4SSTVF32852 ASM4SSTVF32852-114BT ASM4ISSTVF3285 |
DDR 24-Bit to 48-Bit Registered Buffer SSTV SERIES, POSITIVE EDGE TRIGGERED D FLIP-FLOP, TRUE OUTPUT, PBGA114 Specialty Clock Management 2.3 V -2.7 V, DDR 24-bit to 48-bit registered buffer
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Alliance Semiconductor ... ALSC[Alliance Semiconductor Corporation]
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HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
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IC43R16160 IC43R16160-5T IC43R16160-6T IC43R16160- |
DYNAMIC RAM, DDR 4M x 16 Bit x 4 Banks (256-MBIT) DDR SDRAM
|
ICSI[Integrated Circuit Solution Inc]
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M368L1713CTL-LB3 M368L1713CTL M368L1713CTL-CA2 M36 |
128MB DDR SDRAM MODULE (16Mx64 based on 16Mx8 DDR SDRAM) Unbuffered 184pin DIMM 64-bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|
W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate) 8M x 4 BANKS x 8 BIT DDR SDRAM
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Winbond Electronics WINBOND[Winbond]
|
IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI |
16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM From old datasheet system 301K 1% 100PPM TF 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
|
Integrated Silicon Solu... Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution, Inc. Integrated Silicon Solution...
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K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
IDT72T40108 IDT72T4088IDT72T4098 IDT72T4098 |
2.5 VOLT HIGH-SPEED TeraSync? DDR/SDR FIFO 40-BIT CONFIGURATION 2.5 VOLT HIGH-SPEED TeraSync™ DDR FIFO 40-BIT CONFIGURATION
|
IDT
|
IS24C02A-2GLI IS24C02A IS24C16A-3ZLA3 IS24C02A-2DL |
1K-BIT/2K-BIT/4K-BIT/8K-BIT/16K-BIT 2-WIRE SERIAL CMOS EEPROM
|
ISSI[Integrated Silicon Solution, Inc]
|
A48P3616 |
8M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
M14D2561616A-2.5BG M14D2561616A-3BG |
4M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|